High‐temperature operation of high‐power InGaAlP visible light laser diodes with an In0.5+δGa0.5−δP active layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106002
Reference3 articles.
1. High-power operation of a transverse-mode stabilised AlGaInp visible light (λL = 683 nm) semiconductor laser
2. High‐power operation of heterobarrier blocking structure InGaAlP visible light laser diodes
3. Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique
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1. Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy;Journal of Crystal Growth;2005-11
2. High-temperature operation (70°C, 50 mW) of 660-nm-band InGaAlP Zn-diffused window lasers fabricated using highly Zn-doped GaAs layers;IEEE Journal of Selected Topics in Quantum Electronics;1999
3. Design of AlGaInP visible lasers with a low vertical divergence angle;Solid-State Electronics;1998-01
4. The analytical potential of diode laser-based intracavity absorption detection in column liquid chromatography;Analytica Chimica Acta;1996-04
5. AlGaInP/GaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy;Journal of Crystal Growth;1994-04
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