High temperature (77 °C) operation of 634 nm InGaAlP multiquantum‐well laser diodes with tensile‐strained quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109664
Reference8 articles.
1. Improvement in the temperature characteristics of 630 nm band InGaAlP multiquantum-well laser diodes using a 15° misoriented substrate
2. Low threshold current density (760 A/cm2) and high power (45 mW) operation of strained Ga0.42In0.58P multiquantum well laser diodes emitting at 632 nm
3. Room temperature 632.7 nm CW operation of AlGaInP strained multiquantum well lasers grown on (100) GaAs
4. 3 W CW laser diodes operating at 633 nm
5. Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
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1. Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy;Journal of Crystal Growth;2005-11
2. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001
3. Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition;Journal of Applied Physics;1999-04
4. 40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes;IEEE Journal of Selected Topics in Quantum Electronics;1999
5. MBE growth and characterization of high-quality strained multiple quantum well structures;Journal of Crystal Growth;1997-05
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