Improvement in the temperature characteristics of 630 nm band InGaAlP multiquantum-well laser diodes using a 15° misoriented substrate-Reference-Cited by-同舟云学术

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Improvement in the temperature characteristics of 630 nm band InGaAlP multiquantum-well laser diodes using a 15° misoriented substrate

Published:1993 Issue:3 Volume:29 Page:250
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Watanabe M.,Rennie J.,Okajima M.,Hatakoshi G.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19930172?crawler=true&mimetype=application/pdf

Reference8 articles.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Principal phosphor materials and their optical properties;Fundamentals of Phosphors;2006-12-19

2. Principal phosphor materials and their optical properties;Phosphor Handbook;2006-12

3. Improved characteristics of 660nm AlGaInP red laser diodes by precise control of the V/III ratio in metal-organic vapor phase epitaxy;Applied Physics Letters;2006-10-30

4. Electron transport in bulk and multiquantum barrier Al x Ga 1-x InP/GaInP n-i-n diodes;SPIE Proceedings;2005-06-03

5. Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation;Journal of Crystal Growth;2004-05

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