N-type doping of GaN/Si(111) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
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1. Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers;physica status solidi (c);2016-01-29
2. Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer;Applied Surface Science;2015-11
3. Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al x Ga 1− x N/Al y Ga 1− y N Superlattices;Chinese Physics Letters;2015-05
4. First-principles studies of electronic structure and optical properties of GaN surface doped with Si;Optik;2014-05
5. A review of GaN-based optoelectronic devices on silicon substrate;Chinese Science Bulletin;2014-03-01
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