Improvement of the structural and electrical properties of InAsSb epilayer using Sb-rich InAsSb buffer layer grown by hot wall epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy
2. Growth and optical characterization of InAs1−xSbx(0≤x≤1) on GaAs and on GaAs‐coated Si by molecular beam epitaxy
3. InAsSb light emitting diodes and their applications to infra-red gas sensors
4. The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
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1. The complete absorption spectra of InAs0.87Sb0.13 films grown by liquid phase epitaxy;Applied Surface Science;2015-08
2. Structural, compositional and optical analysis of InAsxSb1−x crystals grown by vertical directional solidification method;Journal of Alloys and Compounds;2013-01
3. Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique;Physica B: Condensed Matter;2010-01
4. Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD;Journal of Alloys and Compounds;2008-10
5. Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film;Journal of Alloys and Compounds;2008-10
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