Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique-Reference-Cited by-同舟云学术

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Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique

Published:2010-01 Issue:1 Volume:405 Page:227-230
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Hu S.H.,Yu G.L.,Ge J.,Wang R.,Sun Y.,Wu J.,Wang Q.W.,Dai N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

2. Liquid-phase-epitaxy-grown InAsxSb1−x∕GaAs for room-temperature 8–12μm infrared detectors

3. Improvement of the structural and electrical properties of InAsSb epilayer using Sb-rich InAsSb buffer layer grown by hot wall epitaxy

4. InAsSb∕GaSb heterostructure based mid-wavelength-infrared detector for high temperature operation

5. Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic transitions and hybrid resonance in InAsSb films by reflectance spectra;Applied Physics Letters;2010-10-11

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