Growth and optical characterization of InAs1−xSbx(0≤x≤1) on GaAs and on GaAs‐coated Si by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102187
Reference14 articles.
1. Extended infrared response of InAsSb strained‐layer superlattices
2. AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates
3. Molecular‐beam epitaxial growth and electrical properties of lattice mismatched InAs1−xSbxon (100) GaAs
4. Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy
5. p‐njunction formation in InSb and InAs1−xSbxby metalorganic chemical vapor deposition
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