Molecular‐beam epitaxial growth and electrical properties of lattice mismatched InAs1−xSbxon (100) GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342492
Reference9 articles.
1. Molecular beam epitaxial growth and optical properties of InAs1−xSbxin 8–12 μm wavelength range
2. Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy
3. Long‐wavelength photoluminescence of InAs1−xSbx(0
4. Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1−xSbxgrown on (100) GaAs by molecular‐beam epitaxy
5. Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular‐beam epitaxy
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1. Indium–Arsenic–Antimony Materials and Devices;Reference Module in Materials Science and Materials Engineering;2016
2. Far infrared reflection spectra of InAsxSb1−x (x = 0-0.4) thin films;Journal of Applied Physics;2013-06-07
3. Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors;SPIE Proceedings;2012-05-01
4. Growth of long wavelength InxGa1−xAsySb1−y layers on GaAs from liquid phase;Applied Physics Letters;2006-10-16
5. Liquid-phase-epitaxy-grown InAsxSb1−x∕GaAs for room-temperature 8–12μm infrared detectors;Applied Physics Letters;2006-06-12
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