Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors-Reference-Cited by-同舟云学术

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Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors

Published:2012-05-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Wang Ding,Lin Youxi,Donetsky Dmitry,Shterengas Leon,Kipshidze Gela,Belenky Gregory,Sarney Wendy L.,Hier Harry,Svensson Stefan P.

Publisher

SPIE

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors;Advanced Photonics Research;2021-12-15

2. Long Wavelength InAs/InAsSb Infrared Superlattice Challenges: A Theoretical Investigation;Journal of Electronic Materials;2020-08-09

3. Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates;Progress in Natural Science: Materials International;2019-08

4. InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature;Journal of Materials Science;2018-06-18

5. Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy;Journal of Applied Physics;2015-12-28

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