Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference25 articles.
1. Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices
2. Improvement of the structural and electrical properties of InAsSb epilayer using Sb-rich InAsSb buffer layer grown by hot wall epitaxy
3. Room temperature InAsSb photovoltaic midinfrared detector
4. Interface band gap engineering in InAsSb photodiodes
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, compositional and optical analysis of InAsxSb1−x crystals grown by vertical directional solidification method;Journal of Alloys and Compounds;2013-01
2. Single crystalline InAsxSb1−x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy;Journal of Alloys and Compounds;2012-09
3. LPE growth and characterization of mid-infrared InAs0.85Sb0.15 film on InAs substrate;Journal of Crystal Growth;2011-07
4. Electronic transitions and hybrid resonance in InAsSb films by reflectance spectra;Applied Physics Letters;2010-10-11
5. Effects of annealing on InAsSb films grown by the modified LPE technique;SPIE Proceedings;2010-05-13
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