V-shaped pits formed at the GaN/AlN interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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4. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
5. Growth, spectroscopic and thermal behavior of Cd(SCN)2(DMSO)2
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4. Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy;Journal of Applied Physics;2014-10-21
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