MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference41 articles.
1. Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE;Sakai;J. Cryst. Growth,2002
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3. Impact of high-temperature growth by metalorganic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates;Imura;J. Cryst. Growth,2008
4. Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition;Kim;Appl. Phys. Lett.,2008
5. S. Keller, N.A. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S.P. Denbaars, J.S. Speck, U.K. Mishra, Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition, Journal of Applied Physics 102 (8). 10.1063/1.2801406.
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