Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy-Reference-Cited by-同舟云学术

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Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Published:2014-10-21 Issue:15 Volume:116 Page:153505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dinh Duc V.¹,Oehler F.²,Zubialevich V. Z.¹,Kappers M. J.²,Alam S. N.¹³,Caliebe M.⁴,Scholtz F.⁴,Humphreys C. J.²,Parbrook P. J.¹³

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Matltings, Dyke Parade, Cork, Ireland

2. Department of Materials Science and Metallurgy University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom

3. School of Engineering, University College Cork, Cork, Ireland

4. Institute of Optoelectronics, Ulm University, Ulm 89069, Germany

Funder

Science Foundation Ireland (SFI)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4898569

Reference39 articles.

1. Strain-induced polarization in wurtzite III-nitride semipolar layers

2. Semi-polar nitride surfaces and heterostructures

3. Effect of active QW population on optical characteristics of polar, semipolar and nonpolar III-nitride light emitters

4. High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

5. Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2017-02

2. Semipolar $(11\bar{2}2)$ and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition;Chinese Physics B;2017-02

3. Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells;Journal of Applied Physics;2016-08-07

4. Exciton localization in polar and semipolar (112̅2) In0.2Ga0.8N/GaN multiple quantum wells;Semiconductor Science and Technology;2016-06-30

5. Development of semipolar (11-22) LEDs on GaN templates;SPIE Proceedings;2016-03-08

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