Growth and characterization of cubic InxGa1−xN epilayers on two different types of substrate-Reference-Cited by-同舟云学术

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Growth and characterization of cubic InxGa1−xN epilayers on two different types of substrate

Published:2005-11 Issue:3-4 Volume:284 Page:379-387
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pacheco-Salazar D.G.,Li S.F.,Cerdeira F.,Meneses E.A.,Leite J.R.,Scolfaro L.M.R.,As D.J.,Lischka K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

2. Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

3. Nitride RCLEDs Grown by MBE for POF Applications

4. Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°C

5. Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties

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1. Alloy segregation at stacking faults in zincblende GaN heterostructures;Journal of Applied Physics;2020-10-14

2. Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN;Journal of Applied Physics;2018-09-14

3. X-ray diffraction analysis of cubic zincblende III-nitrides;Journal of Physics D: Applied Physics;2017-09-26

4. Cubic zincblende gallium nitride for green-wavelength light-emitting diodes;Materials Science and Technology;2017-03-17

5. Magnetic and structural properties of Fe-implanted cubic GaN;Journal of Applied Physics;2016-09-09

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