Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Playing with Polarity
2. Review of polarity determination and control of GaN
3. Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy
4. Inversion domains in AlN grown on (0001) sapphire
5. Growth and applications of Group III-nitrides
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1. Low resistivity, p-type, N-Polar GaN achieved by chemical potential control;Applied Physics Express;2022-07-28
2. GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions;Journal of Applied Physics;2022-01-07
3. Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control;Semiconductor Science and Technology;2021-11-29
4. The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation;Advanced Electronic Materials;2021-10-20
5. Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces;ACS Applied Bio Materials;2020-12-01
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