Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Ultraviolet and violet GaN light emitting diodes on silicon
2. Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode
3. Present status of InGaN/GaN/AlGaN-based laser diodes
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1. Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods;Journal of Crystal Growth;2020-04
2. Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate;Thin Solid Films;2018-10
3. LED Materials: Epitaxy and Quantum Well Structures;Handbook of Advanced Lighting Technology;2017
4. Effect of nitridation surface treatment on silicon (1 1 1) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD;Applied Surface Science;2016-01
5. LED Materials: Epitaxy and Quantum Well Structures;Handbook of Advanced Lighting Technology;2016
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