Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Quantum Cascade Laser
2. High-frequency modulation without the relaxation oscillation resonance in quantum cascade lasers
3. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
4. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
5. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
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