Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

Published:2005-06 Issue:3-4 Volume:279 Page:335-340
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu Jiejun,Han Xiuxun,Li Jiemin,Li Dabing,Lu Yuan,Wei Hongyuan,Cong Guangwei,Liu Xianglin,Zhu Qinsheng,Wang Zhanguo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

2. Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

3. Thermal stability of GaN on (111) Si substrate

4. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

5. Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si;IEEE Access;2021

2. The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy;Journal of Crystal Growth;2012-02

3. Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy;Chinese Physics B;2011-09

4. The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate;Journal of Crystal Growth;2010-07

5. Coalescence overgrowth of GaN nano-columns with metalorganic chemical vapor deposition;Nanotechnology;2007-10-09

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