Three-dimensional thermal stresses in on-axis grown SiC crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Investigation of growth processes of ingots of silicon carbide single crystals
2. Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient
3. Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals
4. Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions
5. Thermal system design and dislocation reduction for growth of wide band gap crystals
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2. Stress simulation of 6-inch SiC single crystal;Vacuum;2023-07
3. Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils;Applied Sciences;2018-05-02
4. Anisotropic Three-Dimensional Thermal Stress Modeling and Simulation of Homoepitaxial AlN Single Crystal Growth by the Physical Vapor Transport Method;Crystal Growth & Design;2018-04-05
5. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods;CrystEngComm;2018
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