Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals-Reference-Cited by-同舟云学术

Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals

Published:2003-01 Issue:1-2 Volume:247 Page:219-235
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Klein Olaf,Philip Peter

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. The status of SiC bulk growth from an industrial point of view

2. A.O. Konstantinov, Sublimation growth of SiC, in: G.L. Harris (Ed.), Properties of Silicon Carbide, EMIS Datareview Series, no. 13, Institution of Electrical Engineers, INSPEC, London, pp. 170–203.

3. Growth of large SiC single crystals

4. Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely method

5. Near-equilibrium growth of micropipe-free 6H-SiC single crystals by physical vapor transport

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