Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods-Reference-Cited by-同舟云学术

Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

Published:2018 Issue:43 Volume:20 Page:6957-6962
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Yang Xianglong¹²³⁴⁵^ORCID,Yu Jinying¹²³⁴⁵,Chen Xiufang¹²³⁴⁵,Peng Yan¹²³⁴⁵,Hu Xiaobo¹²³⁴⁵,Xu Xiangang¹²³⁴⁵,Yang Xianglai⁶³⁷,Song Yingxin⁸³⁹,Wang Ruiqi⁵³¹⁰¹¹³

Affiliation:

1. State Key Laboratory of Crystal Materials

2. Shandong University

3. Jinan

4. 250100 China

5. Collaborative Innovation Center for Global Energy Interconnection (Shandong)

6. State Grid of China Technology College

7. 250002 China

8. Jinan Semiconductor Research Institute

9. 250014 China

10. 250061 China

11. State Grid Shandong Electric Power Research Institute

Abstract

Basal plane bending of 4H-SiC single crystals grown using the sublimation method on an open or closed backside seed was measured using high-resolution X-ray diffractometry.

Funder

National Natural Science Foundation of China

Ministry of Education of the People's Republic of China

State Grid Corporation of China

Shandong University

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE00910D

Reference22 articles.