Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealing-Reference-Cited by-同舟云学术

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Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealing

Published:2015-08 Issue: Volume:424 Page:38-41
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shiojiri Daishi,Yamauchi Ryosuke,Fukuda Daiji,Tsuchimine Nobuo,Kaneko Satoru,Matsuda Akifumi,Yoshimoto Mamoru

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. GaN Growth Using GaN Buffer Layer

3. Structural analysis of InxGa1−xN single quantum wells by coaxial-impact collision ion scattering spectroscopy

4. Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

5. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

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1. Tuning the optoelectronic properties of two-dimensional β-Ga2O3 using surface passivation and the layer thickness;Computational Materials Science;2025-01

2. Fabrication of highly-oriented β-Ga₂O₃ thin film on ZnO/AlO _x -buffered cyclo-olefin polymer substrate by excimer laser annealing at room temperature;Japanese Journal of Applied Physics;2023-04-01

3. 氧气退火温度对室温脉冲激光沉积氧化镓薄膜特性的影响;Acta Optica Sinica;2022

4. Solid-phase epitaxial crystallization of β-Ga2O3 thin film by KrF excimer laser irradiation from backside of NiO (111)-buffered α-Al2O3 (0001) substrate at room temperature;Journal of Vacuum Science & Technology A;2021-07

5. Application of Laser Micro-Nano-Fabrication in Sensing Field;Chinese Journal of Lasers;2021

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