The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy-Reference-Cited by-同舟云学术

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The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy

Published:2015-06 Issue: Volume:420 Page:1-5
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bomphrey J.J.,Ashwin M.J.,Jones T.S.

Funder

UK Engineering and Physical Sciences Research Council (EPSRC)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE;Shusterman;J. Cryst. Growth,2006

2. InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications;Carrington;Microelectron. J.,2009

3. MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL;Möck;Mater. Sci. Eng. B,2001

4. High-density InSb-based quantum dots emitting in the mid-infrared;Tasco;J. Cryst. Growth,2007

5. Gain and linewidth enhancement factor in InAs quantum-dot laser diodes;Newell;IEEE Photonics Technol. Lett.,1999

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates;Materials Science and Engineering: B;2021-09

2. Investigation on Sb distribution for InSb/InAs sub-monolayer heterostructure using TEM techniques;Nanotechnology;2019-10-11

3. Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field;Journal of Crystal Growth;2019-04

4. Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate;Journal of Crystal Growth;2019-04

5. Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy;physica status solidi (a);2018-10-12

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