Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate-Reference-Cited by-同舟云学术

Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate

Published:2019-04 Issue: Volume:512 Page:136-141
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zon ,Thainoi Supachok,Kiravittaya Suwit^ORCID,Tandaechanurat Aniwat,Nuntawong Noppadon,Sopitpan Suwat,Yordsri Visittapong,Thanachayanont Chanchana,Kanjanachuchai Songphol,Ratanathammaphan Somchai,Panyakeow Somsak

Funder

National Science and Technology Development Agency

Asian Office of Aerospace Research and Development

Office of Naval Research Global

Thailand Research Fund

NANOTEC

NSTDA

Chulalongkorn University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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5. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy;Chou;Appl. Phys. Lett.,2016

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