Growth evolution and polarization-dependent photoluminescence of lateral InSb/CdTe nanowires
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
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2. InSb: Materials and devices;Micklethwaite,2000
3. H. Weman, D.L. Dasa, Book chapter “III-Antimonide Nanowires” in Advances in III- V semiconductor nanowires and nanodevices, 2011, pp. 89-104. https://doi.org/10.2174/978160805052911101010089.
4. High-mobility electron systems in remotely-doped InSb quantum wells;Goldammer;J. Cryst. Growth,1999
5. S. Gazibegovic, G. Badawy, T.L.J. Buckers, P. Leubner, J. Shen, F.K. de Vries, S. Koelling, L.P. Kouwenhoven, M.A. Verheijen, E.P.A.M. Bakkers, Bottom-up grown 2D InSb nanostructures, Adv. Mater. 31 (14) (2019) 1808181 (pp:1-8). https://doi.org/10.1002/adma.201808181.
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