Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Published:2018-10-12 Issue:1 Volume:216 Page:1800498
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Posri Supeeranat¹,Thainoi Supachok¹,Kiravittaya Suwit²^ORCID,Tandaechanurat Aniwat³,Nuntawong Noppadon⁴,Sopitpan Suwat⁵,Yordsri Visittapong⁶,Thanachayanont Chanchana⁶,Kanjanachuchai Songphol¹,Ratanathammaphan Somchai¹,Panyakeow Somsak¹

Affiliation:

1. Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn UniversityBangkok 10330Thailand

2. Advanced Optical Technology (AOT) Laboratory, Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan UniversityPhitsanulok 65000Thailand

3. International School of Engineering (ISE), Faculty of Engineering, Chulalongkorn UniversityBangkok 10330Thailand

4. National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency (NSTDA)Pathumthani 12120Thailand

5. Thai Microelectronics Center (TMEC), National Science and Technology Development Agency (NSTDA)Chachoengsao 24000Thailand

6. National Metal and Materials Technology Center (MTEC), National Science and Technology Development Agency (NSTDA)Pathumthani 12120Thailand

Funder

National Science and Technology Development Agency

Office of Naval Research Global

Thailand Research Fund

Chulalongkorn University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800498

Reference32 articles.

1. Semiconductor Nanostructures

2. InAs/GaSb type-II superlattice infrared detectors: Future prospect

3. Significantly extended cutoff wavelength of very long-wave infrared detectors based on InAs/GaSb/InSb/GaSb superlattices

4. Competitive technologies of third generation infrared photon detectors

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