InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference9 articles.
1. Sb-based nanostructures for mid-IR optoelectronics;Toropov,2003
2. Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers;Ivanov;J. Cryst. Growth,2005
3. Room-temperature 3.9–4.3μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix;Solov’ev;Appl. Phys. Lett.,2005
4. Temperature-dependent photoluminescence from type-II InSb/InAs quantum dots;Lyublinskaya;J. Appl. Phys.,2006
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1. Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates;Materials Science and Engineering: B;2021-09
2. Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate;Journal of Crystal Growth;2019-04
3. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy;Applied Physics Letters;2016-05-09
4. The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy;Journal of Crystal Growth;2015-06
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