InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices-Reference-Cited by-同舟云学术

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InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices

Published:2015-09 Issue: Volume:425 Page:393-397
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gherasoiu I.,Yu K.M.,Reichertz L.,Walukiewicz W.

Funder

RoseStreet Energy Laboratory

U.S. DOD/DARPA

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

2. Photovoltaic action from InxGa1-xN p-n junctions with x > 0.2 grown on silicon

3. High quality InxGa1-xN thin films with x > 0.2 grown on silicon

4. GaN based nanorods for solid state lighting

5. L.-Y. Chen, Y.-Y. Huang, C.-S. Chang, J.J. Huang, in: Proceedings of the CS MANTECH Conference, Portland, Oregon, USA, May 17th-20th, 2010.

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1. Self-Powered Photodetectors Based on InGaN/PdO PN Heterojunctions for Visible Light Communication;IEEE Electron Device Letters;2024-07

2. Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME);Journal of Crystal Growth;2019-06

3. Changes of the Physical Properties of Sputtered InGaN Thin Films Under Small Nitrogen Gas Flow Variations;Journal of Electronic Materials;2019-02-12

4. Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method;Microelectronic Engineering;2019-02

5. p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect;Materials Today: Proceedings;2019

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