Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. Influence of defects and indium distribution on emission properties of thick In-rich InGaN layers grown by the DERI technique;Dobrovolskas;J. Semicond. Sci. Technol.,2017
2. Indium rich InGaN solar cells grown by MOCVD;Cakmak;J. Mater. Sci.-Mater. Electron.,2014
3. Rich memory and distributed phonology;Port;J. Lang. Sci.,2010
4. InGaN pn-junctions grown by PA-MBE: material characterization and fabrication of nanocolumn electroluminescent devices;Gherasoiu;J. Crys. Growth,2015
5. Investigation of new approaches for InGaN growth with high indium content for CPV application;Arif,2015
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Parasitic behavior of different V/III ratios on the properties of InGaN/GaN heterostructures by MOCVD technique;Journal of Alloys and Compounds;2023-03
2. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01
3. Stress Analysis of Flexible GaInP/GaAs/InGaAs Solar Cells Based on Cu Thin‐Film Substrates;Advanced Energy and Sustainability Research;2022-12-16
4. Numerical simulation of homojunction p-i-n In0.4Ga0.6N solar cell with different absorber layer configurations;Optik;2022-12
5. Indium incorporation at InxGa1-xN relaxed self-assembled nanostructures on Si substrates;Materials Science in Semiconductor Processing;2022-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3