p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect-Reference-Cited by-同舟云学术

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p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect

Published:2019 Issue: Volume:18 Page:1868-1874
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Erdoğan Erman,Kundakçı Mutlu,Emre Kasapoğlu Ahmet,Gür Emre

Publisher

Elsevier BV

Subject

General Medicine

Reference29 articles.

1. Handbook of thin film deposition;Seshan;William Andrew,2002

2. Handbook of Crystal Growth: Thin Films and Epitaxy,2014

3. III-nitride Devices and Nanoengineering,2008

4. Growth and applications of Group III-nitrides

5. Morkoç, H., “ Nitride semiconductors and devices”, Hull, R., Osgood, Jr., R.M., Sakaki, H., Zunger, A., Springer-Verlag Berlin Heidelberg, Germany, 1-39, 45-80, 83-141, 163, (1999) 332-336

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