In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE-Reference-Cited by-同舟云学术

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In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE

Published:2015-09 Issue: Volume:425 Page:13-15
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sasaki Takuo,Takahasi Masamitu,Suzuki Hidetoshi,Ohshita Yoshio,Yamaguchi Masafumi

Funder

the Ministry of Economy, Trade and Industry, Japan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. High-quality metamorphic compositionally graded InGaAs buffers

2. Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells

3. Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

4. Dislocation behavior in InGaAs step‐ and alternating step‐graded structures: Design rules for buffer fabrication

5. Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of in situ characterization techniques in molecular beam epitaxy;Journal of Semiconductors;2024-03-01

2. Relaxation and tilting of single and double layer structures of AlGaSb/GaSb-LPE studied by high resolution x-ray diffraction;Materials Research Express;2020-03-01

3. High-Resolution X-Ray Diffraction Analysis of Epitaxial Films;ACTA METALL SIN;2020

4. Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix;physica status solidi (b);2019-10-07

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