Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4721367
Reference38 articles.
1. Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1−xAs/InAsyP1−y double-heterostructures on InP
2. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
3. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
4. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
5. Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array
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