Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1−xAs/InAsyP1−y double-heterostructures on InP

Author:

Ahrenkiel S.P.,Wanlass M.W.,Carapella J.J.,Ahrenkiel R.K.,Johnston S.W.,Gedvilas L.M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. GaxIn1−xAs thermophotovoltaic converters

2. M.W. Wanlass, J.J. Carapella, A. Duda, K. Emery, L.M. Gedvilas, T. Moriarty, J.S. Ward, J.D. Webb, X. Wu and C.S. Murray, Thermophotovoltaic generation of electricity, in: Fourth NREL Conference 460 (1998) 132.

3. Material parameters of In1−xGaxAsyP1−yand related binaries

4. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

5. Dislocations and strain relief in compositionally graded layers

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