High absorption long wave infrared superlattices using metamorphic buffers
Author:
Affiliation:
1. U.S. Naval Research Laboratory, Washington, DC 20375, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4982651
Reference18 articles.
1. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
2. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
3. Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms
4. High operating temperature XBn-InAsSb bariode detectors
5. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors
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1. Growth of 6.2 Å semiconductor topological materials on lattice engineered virtual substrates;Infrared Sensors, Devices, and Applications XIII;2023-10-10
2. InAs/InAsSb type-II superlattice with near room-temperature long-wave emission through interface engineering;Rare Metals;2021-09-29
3. Design and growth of short-period long wavelength infrared InAsSb/InAsSb superlattices on lattice engineered metamorphic buffers;Journal of Applied Physics;2020-07-28
4. InAs1−ySby virtual substrates grown by MOCVD for long wave infrared detectors;Journal of Crystal Growth;2020-04
5. Back Surface Plasmonic Grating for Increased Quantum Efficiency of nBn Photodetectors With Ultra-Thin Metamorphic InAs0.8Sb0.2 Absorber;IEEE Journal of Quantum Electronics;2019-04
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