Dislocation behavior in InGaAs step‐ and alternating step‐graded structures: Design rules for buffer fabrication
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115341
Reference14 articles.
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Analysis by HR-STEM of the Strain Generation in InP after SiNx Deposition and ICP Etching;Journal of Electronic Materials;2020-07-15
2. Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon;Applied Surface Science;2017-02
3. In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE;Journal of Crystal Growth;2015-09
4. Critical boron-doping levels for generation of dislocations in synthetic diamond;Applied Physics Letters;2014-10-27
5. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy;Semiconductor Science and Technology;2014-02-12
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