Critical boron-doping levels for generation of dislocations in synthetic diamond
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4900741
Reference38 articles.
1. Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond
2. Residual strain around grown-in defects in CVD diamond single crystals: A 2D and 3D Raman imaging study
3. Structural analysis of dislocations in type-IIa single-crystal diamond
4. Multi-technique analysis of high quality HPHT diamond crystal
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