Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix-Reference-Cited by-同舟云学术

Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix

Published:2019-10-07 Issue:2 Volume:257 Page:1900392
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Zhan Wenbo¹^ORCID,Ishida Satomi²,Kwoen Jinkwan¹,Watanabe Katsuyuki¹,Iwamoto Satoshi¹²³,Arakawa Yasuhiko¹

Affiliation:

1. Institute for Nano Quantum Information ElectronicsThe University of Tokyo 4-6-1 Komaba, Meguroku Tokyo 153-8505 Japan

2. Research Center for Advanced Science and TechnologyThe University of Tokyo 4-6-1 Komaba, Meguroku Tokyo 153-8904 Japan

3. Institute of Industrial ScienceThe University of Tokyo 4-6-1 Komaba, Meguroku Tokyo 153-8505 Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900392

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3. T.Kageyama K.Nishi M.Yamaguchi R.Mochida Y.Maeda K.Takemasa Y.Tanaka T.Yamamoto M.Sugawara Y.Arakawa inCLEO/Europe and EQEC 2011 Conf. Digest OSA Technical Digest (CD) Optical Society of America Washington D.C.2011 paper PDA_1.

4. Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers

5. Metamorphic approach to single quantum dot emission at 1.55μm on GaAs substrate

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