Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy

Published:2015-07 Issue: Volume:421 Page:27-32
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Réveret F.,André Y.,Gourmala O.,Leymarie J.,Mihailovic M.,Lagarde D.,Gil E.,Castelluci D.,Trassoudaine A.

Funder

ANR

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

2. Nitridation- and Buffer-Layer-Free Growth of $[1\bar{1}00]$-Oriented GaN Domains on $m$-Plane Sapphire Substrates by Using Hydride Vapor Phase Epitaxy

3. Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

4. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

5. Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates;Journal of Applied Physics;2019-08-28

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