Nitridation- and Buffer-Layer-Free Growth of $[1\bar{1}00]$-Oriented GaN Domains on $m$-Plane Sapphire Substrates by Using Hydride Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/5/i=12/a=121001/pdf
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