Author:
Leung Benjamin,Tsai Miao-Chan,Song Jie,Zhang Yu,Xiong Kanglin,Yuan Ge,Coltrin Michael E.,Han Jung
Funder
U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering
Yale Institute for Nanoscience and Quantum Engineering
NSF MRSEC
Solid-State Lighting Science Energy Frontier Research Center
Department of Energy Office of Basic Energy Science
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference39 articles.
1. High quality Ge on Si by epitaxial necking;Langdo;Appl. Phys. Lett.,2000
2. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO);Hiramatsu;J. Cryst. Growth,2000
3. Heteroepitaxy and selective area heteroepitaxy for silicon photonics;Lourdudoss;Curr. Opin. Solid State Mater. Sci.,2012
4. C. Bayram, J.A. Ott, K.T. Shiu, C.W. Cheng, Y. Zhu, J. Kim, M. Razeghi, D.K. Sadana, Cubic phase GaN on nano-grooved Si (100) via maskless selective area epitaxy, Adv. Funct. Mater. 24 (28) (2014) 4492-4496, 10.1002/adfm.201304062
5. Single-crystal germanium growth on amorphous silicon;McComber;Adv. Funct. Mater.,2012
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献