Author:
Jousseaume Yann,Cauwet François,Ferro Gabriel
Funder
Agence Nationale de la Recherche
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Review of Silicon Carbide Power Devices and Their Applications;She;IEEE Trans. Ind. Electron.,2017
2. Silicon carbide: A unique platform for metal-oxide-semiconductor physics;Liu;Appl. Phys. Rev.,2015
3. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review;Casady;High-Temp. Electron.,1998
4. Challenges in SiC power MOSFET design;Matocha;Solid. State. Electron.,2008
5. Investigation of electrically active defects of silicon carbide using atomistic scale modeling and simulation;Chatterjee;Phys. B Condens. Matter,2007
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