Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality-Reference-Cited by-同舟云学术

Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality

Published:2022-08 Issue: Volume:592 Page:126721
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakajima Kazuo,Nakanishi Masami,Su Martin,Hsu Chuck

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress

2. Growth of high-quality multicrystalline Si ingots using noncontact crucible method

3. Growth of Si single bulk crystals with low oxygen concentrations by the noncontact crucible method using silica crucibles without Si3N4 coating

4. Growth of square Si single bulk crystals with large side-face widths using noncontact crucible method

5. Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Importance of zero cross-point (Cp = 0) control between the vacancy and interstitial Si atom concentration curves to obtain a perfect Si ingot using Si melt growth;Journal of Crystal Growth;2024-10

2. Importance of Zero Cross-Point (Cp = 0) Control between the Vacancy and Interstitial Si Atom Concentration Curves to Obtain a Perfect Si Ingot Using Si Melt Growth;2024

3. Two-dimensional BMD, BSF, ring-OISF and COP distributions in a dislocation-free ingot grown by the NOC method;Journal of Crystal Growth;2023-03