Growth of Si single bulk crystals with low oxygen concentrations by the noncontact crucible method using silica crucibles without Si3N4 coating-Reference-Cited by-同舟云学术

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Growth of Si single bulk crystals with low oxygen concentrations by the noncontact crucible method using silica crucibles without Si3N4 coating

Published:2013-06 Issue: Volume:372 Page:121-128
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakajima Kazuo,Murai Ryota,Morishita Kohei,Kutsukake Kentaro

Funder

New Energy and Industrial Technology Development Organization

Ministry of Economy, Trade and Industry

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. Silica versus silicon nitride crucible: Influence of thermophysical properties on the solidification of multi-crystalline silicon by Bridgman technique

2. Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting

3. Directional growth method to obtain high quality polycrystalline silicon from its melt

4. Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic casting method by controlling thermal conductivity under crucibles

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Importance of zero cross-point (Cp = 0) control between the vacancy and interstitial Si atom concentration curves to obtain a perfect Si ingot using Si melt growth;Journal of Crystal Growth;2024-10

2. Importance of Zero Cross-Point (Cp = 0) Control between the Vacancy and Interstitial Si Atom Concentration Curves to Obtain a Perfect Si Ingot Using Si Melt Growth;2024

3. Two-dimensional BMD, BSF, ring-OISF and COP distributions in a dislocation-free ingot grown by the NOC method;Journal of Crystal Growth;2023-03

4. Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality;Journal of Crystal Growth;2022-08

5. Theoretical distributions of point-defect concentration in a Si ingot grown inside a melt using the noncontact crucible method considering the accumulation effect of diffusion flux;Journal of Crystal Growth;2020-10

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