Growth of high-quality multicrystalline Si ingots using noncontact crucible method-Reference-Cited by-同舟云学术

Growth of high-quality multicrystalline Si ingots using noncontact crucible method

Published:2012-09 Issue:1 Volume:355 Page:38-45
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakajima Kazuo,Morishita Kohei,Murai Ryota,Kutsukake Kentaro

Funder

New Energy and Industrial Technology Development Organization

Ministry of Economy, Trade and Industry

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

2. Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting

3. Directional growth method to obtain high quality polycrystalline silicon from its melt

4. K. Nakajima, K. Kutsukake, K. Fujiwara, N. Usami, S. Ono, I. Yamasaki, Proceedings of the 35th IEEE Photovoltaic Specialists Conference, 2010 p. 817.

5. K. Nakajima, N. Usami, K. Fujiwara, K. Kutsukake, S. Okamoto, Proceedings of 24th European Photovoltaic Solar Energy Conference, 2009 p. 1219.

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