Growth of square Si single bulk crystals with large side-face widths using noncontact crucible method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress
2. Growth of high-quality multicrystalline Si ingots using noncontact crucible method
3. Growth of Si single bulk crystals with low oxygen concentrations by the noncontact crucible method using silica crucibles without Si3N4 coating
4. Numerical analysis of sapphire crystal growth by the Kyropoulos technique
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1. Two-dimensional BMD, BSF, ring-OISF and COP distributions in a dislocation-free ingot grown by the NOC method;Journal of Crystal Growth;2023-03
2. Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality;Journal of Crystal Growth;2022-08
3. Influence of interactions between alumina crucible and Si-Ca-Fe melt on B and P removal from silicon;Separation and Purification Technology;2021-01
4. Theoretical distributions of point-defect concentration in a Si ingot grown inside a melt using the noncontact crucible method considering the accumulation effect of diffusion flux;Journal of Crystal Growth;2020-10
5. Growth of Si multicrystalline ingots using the conventional cast method;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020
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