Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers-Reference-Cited by-同舟云学术

Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers

Published:2022-05 Issue: Volume:586 Page:126627
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Altayar A.R,Al-Saymari F.A.,Repiso E.,Hanks L.,Craig A.P.,Bentley M.,Delli E.,Carrington P.J.,Krier A.,Marshall A.R.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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