Affiliation:
1. Faculty of Engineering University of Miyazaki Miyazaki 889‐2192 Japan
2. Graduate School of Information Science and Technology Hokkaido University Hokkaido 060‐0814 Japan
Abstract
Midinfrared photonic devices are used as lasers and photodetectors in optical gas sensors and fiber‐optic communications. Herein, the pair number dependence and strain compensation dependence of the InAsSb/InAsP superlattice structure to increase luminescence intensity and reduce crystal defects is investigated. InAs substrates are used to demonstrate various effects of strain compensation, including its role in increasing luminescence intensity and improving the surface flatness. Furthermore, the photoluminescence spectra of a grown superlattice between the InAs substrate and GaAs substrate with two‐temperature‐step growth are shown.