Interface effect on structural and optical properties of type II InAs/GaSb superlattices
Author:
Funder
NSF
973 Program
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
2. Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices
3. How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2–3 $\mu{\rm m}$
4. Midinfrared type-II InAs∕GaSb superlattice photodiodes toward room temperature operation
5. Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
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1. Metal Organic Vapor‐Phase Epitaxy Growth of Multilayer Stacked InAsSb/InAsP Superlattices on GaAs and InAs Substrate;physica status solidi (a);2024-02-08
2. Asymmetric and symmetric interfaces in type II MWIR InAs/GaSb superlattices;Surfaces and Interfaces;2024-01
3. Influence of V/III flux ratio on type-II InAs/GaSb superlattice for very-long wavelength;Micro and Nanostructures;2023-06
4. Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy;Chinese Physics B;2022-11-01
5. Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories;Frontiers in Physics;2022-04-14
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