Investigation of MOCVD growth parameters on the quality of GaN epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system
2. R. Steins, H. Hardtdegen, N. Kaluza, M.v.d. Ahe, Y.S. Cho, Z. Sofer, Proceedings of the 11th European Workshop on MOCVD, Lausanne, Switzerland, 2005.
3. The growth mechanism of GaN with different H2/N2 carrier gas ratios
4. Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH3/H2System: A Computational Fluid Dynamics Simulation Study
5. Nature of the parasitic chemistry during AlGaInN OMVPE
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1. High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors;Journal of Crystal Growth;2018-02
2. Influencing factors of GaN growth uniformity through orthogonal test analysis;Applied Thermal Engineering;2015-12
3. Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor;Journal of Crystal Growth;2015-12
4. Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate;Applied Physics Letters;2013-01-14
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