Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH3/H2System: A Computational Fluid Dynamics Simulation Study
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 62 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy;ACS Applied Materials & Interfaces;2023-12-12
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4. Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD;Ceramics International;2022-12
5. Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy;Applied Physics Letters;2022-10-17
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